? 1991,2001 mos field effect transistor 2sk1584 n-channel mos fet for switching document no. d15283ej2v0ds00 (2nd edition) date published february 2001 ns cp (k) printed in japan data sheet the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. the mark h shows major revised points. package drawing (unit : mm) 1 2 3 4.50.1 1.60.2 0.8min . 2.50.1 4.00.25 0.42 0.42 0.06 0.06 0.06 1.5 3.0 1.50.1 0.41 +0.03 -0.05 0.47 description the 2sk1584 is a switching device which can be driven directly by a 5-v power source. the 2sk1584 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as actuator driver. features can be driven by a 5-v power source. low on-state resistance : r ds(on)1 = 2.0 w max. (v gs = 4 v, i d = 0.3 a) r ds(on)2 = 1.5 w max. (v gs = 10 v, i d = 0.3 a) absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss 30 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25c) i d(dc) 500 ma drain current (pulse) note1 i d(pulse) 1.0 a total power dissipation (t a = 25c) note2 p t 2.0 w channel temperature t ch 150 c storage temperature t stg - 55 to +150 c notes1. pw 10 ms, duty cycle 50% 2. mounted on ceramic board of 16 cm 2 0.7 mm remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. equivalent circuit source internal diode gate protection diode gate drain electrode connection 1.source 2.drain 3.gate markin g : nh
data sheet d15283ej2v0ds 2 2sk1584 electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1.0 m a gate leakage current i gss v gs = 20 v, v ds = 0 v 10 m a gate cut-off voltage v gs(off) v ds = 10 v, i d = 0.1 ma 1.3 1.85 2.5 v forward transfer admittance | y fs | v ds = 5 v, i d = 0.5 a 350 440 ms r ds(on)1 v gs = 4 v, i d = 0.3 a 1.2 2.0 w drain to source on-state resistance r ds(on)2 v gs = 10 v, i d = 0.3 a 0.65 1.5 w input capacitance c iss 60 pf output capacitance c oss 50 pf reverse transfer capacitance c rss v ds = 10 v v gs = 0 v f = 1 mhz 9pf turn-on delay time t d(on) 80 ns rise time t r 270 ns turn-off delay time t d(off) 100 ns fall time t f v dd = 10 v, i d = 0.3 a v gs(on) = 4 v r g = 10 w r l = 33 w 110 ns test circuit switching time pg. r g 0 v gs d.u.t. r l v dd t = 1 s m duty cycle 1% v gs wave form i d wave form v gs 10% 90% v gs (on) 10% 0 i d 90% 90% t d(on) t r t d(off) t f 10% t i d 0 t on t off
data sheet d15283ej2v0ds 3 2sk1584 typical characteristics (t a = 25c) 20 60 80 40 0 100 derating factor of forward bias safe operating area dt - derating factor - % t c - case temperature - ?c 0 20 40 60 80 100 120 140 160 120 forward bias safe operating area 30 100 i d - drain current - a 1310 0.3 0.1 v ds - drain to source voltage - v i d(pulse) pw = 1 ms i d(dc) v dss 100 ms r ds(on) limited (v gs = 4 v) 10 3 1 0.3 0.1 0.03 0.01 10 ms dc t a = 25?c single pulse total power dissipation vs. ambient temperature p t - total power dissipation - w t a - ambient temperature - ?c 30 0 150 120 60 180 90 mounted on ceramic board of 16 cm 2 0.7 mm 2.5 2.0 1.5 1.0 0.5 0 0.2 0.6 0.8 0.4 0 1.0 1.2 drain current vs. drain to source voltage i d - drain current - a v ds - drain to source voltage - v 0 1234 567 3.5 v 3.0 v 2.5 v v gs = 4.0 v pulsed 0123 100 10 1 0.1 5 4 500 v gs - gate to source voltage - v t a = 150?c 75?c 25?c C25?c transfer characteristics i d - drain current - ma v ds = 10 v pulsed gate cut-off voltage vs. channel temperature v gs(off) - gate cut-off voltage - v t ch - channel temperature - ?c 30 0 C30 150 120 60 90 3 2 1 0 v ds = 10 v i d = 0.1 ma h
data sheet d15283ej2v0ds 4 2sk1584 100 30 10 3 1 300 v ds = 5 v pulsed 1000 i d - drain current - ma | y fs | - forward transfer admittance - ms t a = - 25 ?c 10000 3000 1000 300 100 30 10 75 ?c 25 ?c 150 ?c forward transfer admmittance vs. drain current 0 drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - w v gs - gate to source voltage - v 0 4 8 1216 2024 28 3 2 1 i d = 0.3 a pulsed drain to source on-state resistance vs. drain current 100 10 1000 i d - drain current - ma r ds(on) - drain to source on-state resistance - w 0 t a = 150 ?c 75 ?c - 25 ?c 25 ?c v gs = 4 v pulsed 30 300 1 2 r ds(on) - drain to source on-state resistance - w t ch - channel temperature - ?c 30 0 C30 150 120 60 90 3 2 1 0 drain to source on-state resistance vs. channel temperature v gs = 10 v v gs = 4 v i d = 0.3 a pulsed capacitance vs. drain to source voltage 30 100 c iss ,c oss ,c rss - capacitance - pf 1310 0.3 0.1 v ds - drain to source voltage - v 3 1 1000 300 100 30 10 c iss c oss c rss v gs = 0 v f = 1 mh z 10 100 1000 i d - drain current - ma t d(on) ,t r ,t d(off) ,t f - switchig time - ns t d(off) t d(on) t f t r switching characteristics 30 300 10000 300 100 30 10 v dd = 10 v v gs (on) = 4 v r g = 10 w
data sheet d15283ej2v0ds 5 2sk1584 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1000 300 v gs = 0 v pulsed source to drain diode forward voltage i sd - source to drain current - ma v sd - source to drain voltage - v 100 30 10 3 1
data sheet d15283ej2v0ds 6 2sk1584 [memo]
data sheet d15283ej2v0ds 7 2sk1584 [memo]
2sk1584 m8e 00. 4 the information in this document is current as of february, 2001. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above).
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